Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
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概要
- 論文の詳細を見る
Various Si1-xGex shell strains induced by changing the thickness or tuning the Ge and Si contents as well as by modulating the valence band structure and hole transport characteristics of core/shell nanowire field effect transistors (FETs) have been calculated. As Si1-xGex shell thickness increases, the strained valence subbands shift upwards and warp markedly. Most of the corresponding hole effective masses of the top five subbands decrease. Meanwhile, the hole mobility of the Ge(110) nanowire increases with increasing shell thickness. As the Ge concentration in the Si1-xGex shell decreases, the strained valence subbands and hole mobility show similar shifts. As a result, our calculation indicates the possibility of improving the nanowire performance of heterostructure nanowire FETs.
- 2010-04-25
著者
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Du Gang
Institute Of Microelectronics Peking University
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Jinfeng Kang
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Gang Du
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yuning Zhao
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Xu Honghua
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Yuhui He
Key Laboratory of Nanofabrication and Novel Devices Integration Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
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Chun Fan
Computer Center of Peking University, Beijing 100871, China
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Ruqi Han
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Xiaoyan Liu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Honghua Xu
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, Beijing 100871, China
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