Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Liu Xiao

  Institute Of Bioengineering College Of Life Sciences Zhejiang Sci-tech University

• Du Gang

  Institute Of Microelectronics Peking University

• Wei Kang

  Institute of Microelectronics, Peking University, 100871, P. R. China

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• Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal--Oxide--Semiconductor Field-Effect Transistors
• Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
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• 中国の高等職業教育について(高等教育段階の職業教育,シンポジウム,日本産業教育学会第50回大会報告)

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