Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
スポンサーリンク
概要
- 論文の詳細を見る
A band-to-band tunneling model including trap-assisted tunneling has been implemented in our ensemble full band Monte Carlo simulator. Four kinds of band-to-band tunneling mechanisms are taken into account. All the parameters in the band-to-band tunneling model are verified by comparing the pn junction reverse current with the experimental data. Then, gate-induced-drain-leakage currents caused by band-to-band tunneling in a 45 nm gate length n-metal–oxide–semiconductor field-effect-transistor are investigated. Results indicate that band-to-band tunneling can cause additional hot holes which becomes an important issue for the device reliability. Moreover, The gate-induced-drain-leakage currents caused by band-to-band tunneling in parallel with Si/SiO2 interface and normal to Si/SiO2 interface are compared. The influence of drain voltage on the two components of the gate-induced-drain-leakage currents is considered.
- 2007-04-30
著者
-
Du Gang
Institute Of Microelectronics Peking University
-
Han Ruqi
Institute Of Microelectronics Peking University
-
Wang Jian
Institute Of Image Communication And Information Processing Shanghai Jiao Tong University
-
Du Gang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
-
Xia Zhiliang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Song Yuncheng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
-
Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
関連論文
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
- Evaluations of Scaling Properties for Ge on Insulator MOSFETs in Nano-Scale
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Identification of Sulfonic Phthalocyaninatozinc Isomers
- A Vertical SOI CMOS Technology with p-MOS on Si Film and n-MOS on Bulk Base
- Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
- An Unsupervised Approach for Video Text Localization(Image Processing and Video Processing)
- Hydrogen Annealing Induced the Enhancement of Ferromagnetism in Cr-Doped TiO2 Anatase Films
- Impact of Gate Overlap on Performance of Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors Including Gate Induced Barrier Lowering Effect
- Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
- Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
- Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
- Simulation of Retention Behavior for the Phase Change Memory
- The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
- Improved Memory Characteristics of A Novel TaN/Al
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal--Oxide--Semiconductor Field-Effect Transistors
- Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal-Oxide-Semiconductor Field-Effect Transistors (Special Issue : Solid State Devices and Materials)
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation