A Vertical SOI CMOS Technology with p-MOS on Si Film and n-MOS on Bulk Base

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概要

• 論文の詳細を見る
• 2004-09-15

著者

• Zhang Shengdong

  Institute Of Microelectronics Peking University

• Chan Mansun

  The Hong Kong University Of Science And Technology

• LIN Xinnan

  The Hong Kong University of Science and Technology

• HAN Ruqi

  Institute of Microelectronics, Peking University

• WU Xusheng

  The Hong Kong University of Science and Technology

• Han Ruqi

  Institute Of Microelectronics Peking University

関連論文

• Simulation Study of Intrinsic Parameter Fluctuations in Variable-Body-Factor Silicon-on-Thin-Box Metal Oxide Semiconductor Field Effect Transistors
• A Vertical SOI CMOS Technology with p-MOS on Si Film and n-MOS on Bulk Base
• A Simple Method to Fabricate Double-Gate SOI MOSFET with Diffusion Layer on Bulk Silicon Wafer as the Bottom Gate
• Triple-Gate Fin Field Effect Transistors with Fin-Thickness Optimization to Reduce the Impact of Fin Line Edge Roughness
• Hydrogen Annealing Induced the Enhancement of Ferromagnetism in Cr-Doped TiO2 Anatase Films
• Monte Carlo Simulation of Band-to-Band Tunneling in Silicon Devices
• The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device

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