The Effect of Current Compliance on the Resistive Switching Behaviors in TiN/ZrO2/Pt Memory Device
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概要
- 論文の詳細を見る
In this paper, TiN/ZrO2/Pt sandwiched resistive switching memory devices were fabricated. The effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device was studied. The different dependence of low resistance state on the set current compliance were observed under the different magnitudes of set current compliance: 1) the average read current was linearly dependent on the set current compliance in the magnitude of low set current compliance; 2) then a weaker dependence of the average read current on the set current compliance was observed in the magnitude of higher set current compliance; 3) when the current compliance is high enough, the unipolar resistive switching behaviors instead of the bipolar resistive switching was shown. A physical model based on oxygen vacancy conducting filamentary paths is proposed to explain the effect of set current compliance on the resistive switching behaviors in TiN/ZrO2/Pt memory device.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-04-25
著者
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Han Ruqi
Institute Of Microelectronics Peking University
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Wang Yi
Institute For Horticultural Plants China Agricultural University
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Gao Bin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lifeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Liu Xiaoyan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xu Nuo
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Sun Bing
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Dedong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Han Ruqi
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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