Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
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概要
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Although Resistive random access memory (RRAM) is a promising alternative for next-generation nonvolatile memory, it still suffers from high switching current/power, resulting in large selectors that are normally in series with resistive devices. In this paper, a novel Dynamic random access memory (DRAM) like one-transistor--one-resistor (1T1R) structure is proposed, in which the source/drain of the transistor also serves as the bottom electrode of the RRAM device. Complementary metal oxide semiconductor (CMOS) compatible Hf-based Si/HfO2/TiN RRAM devices were fabricated and ultralow switching current/power was obtained. The set/reset current can be as low as 50 nA/1.25 nA. The programming power for set and reset is only 18 μW and 1.625 nW, respectively. The mechanism of both Schottky emission and electronic hopping via oxygen vacancy defects is proposed to explain the measured resistive switching characteristics.
- 2012-04-25
著者
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Kwong Dim-Lee
Institute of Microelectronics
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SINGH Navab
Institute of Microelectronics
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Guo-Qiang Lo
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Singh Navab
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Zhang Feifei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Li Xiang
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Gao Bin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Bing
Institute of Microelectronics, Peking University, Beijing 100871, China
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Huang Peng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Fu Yihan
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Yuansha
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lifeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kwong Dim-Lee
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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