Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation (Special Issue : Applied Physics on Materials Research)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Li Xiang
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Gan Chee
Nanyang Technological University, School of Materials Science and Engineering, Singapore 639798
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Lu Weijie
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685
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Pey Kin
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685
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Wang Xinpeng
Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798
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Chen Zhixian
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685
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Navab Singh
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685
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Leong Kam
GLOBALFOUNDRIES Singapore Pte Ltd, 60 Woodlands Industrial Park D Street 2, Singapore 738406
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Tan Chuan
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), 11 Science Park Road, Singapore 117685
関連論文
- Super-Resolution Near-Field Disk with Phase-Change Sn-Doped GeSbTe Mask Layer
- First-Principles Investigation of Hexagonal WB Surfaces
- Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation (Special Issue : Applied Physics on Materials Research)
- Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power