Super-Resolution Near-Field Disk with Phase-Change Sn-Doped GeSbTe Mask Layer
スポンサーリンク
概要
- 論文の詳細を見る
A new mask layer of Sn-doped (7 at. %) Ge2Sb2Te5 was developed and used on super-resolution near-field phase-change optical disks (super-RENS). Temperature-dependent reflectivity result showed a reflectivity change at 169 °C with Sn doping into Ge2Sb2Te5. The mask material also showed high thermal stability. Optical study indicated the suitability of the film for use in blue-laser recording and as a mask layer. Fast crystallization within 90 ns was achieved using a pulsed high-power laser beam of 405 nm wavelength. Dynamic recording performance of the new structure showed carrier-to-noise ratios (CNR) of 37 and 18 dB obtained for 80 and 50 nm mark sizes, respectively. Readout thermal stability of 12,000 cycles was realized for 80 nm mark sizes. The incorporation of Sn-doped GeSbTe (GST) as mask layer in the super-RENS structure significantly improved the CNR and thermal stability of the disk.
- 2009-03-25
著者
-
Shi Lu
Data Storage Institute
-
Lee Mei
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
-
Ting Lee
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
-
Yong Kok
Nanyang Technological University, School of Materials Science and Engineering, Singapore 639798
-
Gan Chee
Nanyang Technological University, School of Materials Science and Engineering, Singapore 639798
-
Shi Lu
Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
-
Lee Mei
Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
-
Ting Lee
Data Storage Institute, A*STAR (Agency for Science, Technology and Research), DSI Building, 5 Engineering Drive 1, Singapore 117608
関連論文
- Thermal Lithography for 100-nm Dimensions Using a Nano-Heat Spot of a Visible Laser Beam : Instrumentation, Measurement, and Fabrication Technology
- Optical Transition of Chalcogenide Phase-Change Thin Films
- A New Structure of Super-Resolution Near-Field Phase-Change Optical Disk with a Sb_2Te_3 Mask Layer
- Study of the Superlattice-Like Phase Change Optical Recording Disks
- Study of the Multi-Level Reflection Modulation Recording for Phase Change Optical Disks
- Thermal Modeling of Grooved Phase Change Optical Recording Disk
- Fabrication and Characterization of Ion-Exchanged Optical Waveguides in Potassium Lithium Niobate Crystal Substrates(Optics and Quantum Electronics)
- Thermal Analysis of Multi Track Phase Change Optical Recording Using a Special Parallel Recording Array Head
- Multi-Dimensional Multi-Level Optical Pickup Head
- Blu-ray Type Super-Resolution Near-Field Phase Change Disk with In2Ge8Sb85Te5 Mask Layer
- Super-Resolution Near-Field Disk with Phase-Change Sn-Doped GeSbTe Mask Layer
- Error Correction Code Failure Rate Analysis for Parity-Check-Coded Optical Recording Systems
- Vertical Silicon Nanowire Diode with Nickel Silicide Induced Dopant Segregation (Special Issue : Applied Physics on Materials Research)
- Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films
- Thermal Modeling of Grooved Phase Change Optical Recording Disk
- Optical Transition of Chalcogenide Phase-Change Thin Films