Dynamics of Ultrafast Crystallization in As-Deposited Ge2Sb2Te5 Films
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概要
- 論文の詳細を見る
Femtosecond laser-induced ultrafast crystallization in 80 nm as-deposited Ge2Sb2Te5 films has been investigated by time-resolved microscopy. With an average fluence of approximately 10 mJ/cm2, a transient nonequilibrium state of the excited material was formed within 2 ps. The results can be interpreted as an electronically induced nonthermal phase transition.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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Shi Lu
Data Storage Institute
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Miao Xiang
Data Storage Institute
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HUANG Su
Data Storage Institute
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WONG Kai
Data Storage Institute
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Wang Qin
Department Of Chemistry Shanghai Normal University
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Wong Kai
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Chong Tow
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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Miao Xiang
Data Storage Institute, DSI Building, 5 Engineering Drive 1, Singapore 117608
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Wang Qin
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576
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