Chen Bing | Institute of Microelectronics, Peking University, Beijing 100871, China
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概要
- Chen Bingの詳細を見る
- 同名の論文著者
- Institute of Microelectronics, Peking University, Beijing 100871, Chinaの論文著者
関連著者
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Zhang Feifei
Institute of Microelectronics, Peking University, Beijing 100871, China
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Gao Bin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Bing
Institute of Microelectronics, Peking University, Beijing 100871, China
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Huang Peng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Kwong Dim-Lee
Institute of Microelectronics
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SINGH Navab
Institute of Microelectronics
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Du Gang
Institute Of Microelectronics Peking University
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Guo-Qiang Lo
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Singh Navab
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Li Xiang
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Fu Yihan
Institute of Microelectronics, Peking University, Beijing 100871, China
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Chen Yuansha
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lifeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kang Jinfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
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Kwong Dim-Lee
Institute of Microelectronics, ASTAR (Agency for Science, Technology and Research), Singapore 117685
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Deng Yexin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yu Di
Institute of Microelectronics, Peking University, Beijing 100871, China
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Liu Lingfeng
Institute of Microelectronics, Peking University, Beijing 100871, China
著作論文
- Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power
- Optimization of Conductive Filament of Oxide-Based Resistive-Switching Random Access Memory for Low Operation Current by Stochastic Simulation