Simulation of Retention Behavior for the Phase Change Memory
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概要
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We developed a comprehensive simulation program of phase change memory (PCM) including the electrical, thermal, phase change and percolation model. The set, reset and retention behavior for a typical thin film phase change material (GST) are simulated and evaluated. Both the resistance evaluation and the micro phase change process are simulated that can help to understand of the phase change physical mechanism. The influence of pre-existing grains on the retention is evaluated considering the pre-existing grains' amount and its distribution.
- 2012-02-25
著者
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Du Gang
Institute Of Microelectronics Peking University
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Kang Jinfeng
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Liu Xiaoyan
Institute of Microelectronics, Peking University and Key Laboratory of Microelectronic Devices and Circuits, Ministry of Education, No. 5 Yiheyuan Road, Haidian District, Beijing 100871, P. R. China
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Lian Guijun
School of Physics, Peking University, Beijing 100871, China
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Chen Jian
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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Song Decheng
Shenzhen Graduate School, Peking University, Guangdong 518055, China
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