Impact of Junction Nonabruptness on Random-Discrete-Dopant Induced Variability in Intrinsic Channel Trigate Metal--Oxide--Semiconductor Field-Effect Transistors
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概要
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Using full three-dimensional (3D) technology computer-aided design (TCAD) simulations, we present a comprehensive statistical study on the random discrete dopant (RDD) induced variability in state-of-the-art intrinsic channel trigate MOSFETs. This paper is focused on the RDD variability sources that are introduced by dopant diffusion from highly doped source/drain (S/D) regions into the undoped channel region, which is referred to as junction nonabruptness (JNA). By considering a realistic lateral doping profile in the channel and evaluating the impact of JNA on the variability of performance parameters such as threshold voltage (V_{\text{th}}), subthreshold slope (SS), drain-induced barrier lowering (DIBL), on current (I_{\text{on}}), and off current (I\add{-0.3}\raise0.3_\scale70%{\tbox{off}}), we show that the effect of JNA can lead to substantial device variations. The nonnegligible influence of JNA puts limitations on device scaling, which is also investigated in this paper.
- 2013-04-25
著者
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Liu Xiao
Institute Of Bioengineering College Of Life Sciences Zhejiang Sci-tech University
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Du Gang
Institute Of Microelectronics Peking University
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Wei Kang
Institute of Microelectronics, Peking University, 100871, P. R. China
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Liu Xiao
Institute of Microelectronics, Peking University, 100871, P. R. China
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