He Yandong | Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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概要
関連著者
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He Yandong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Du Gang
Institute Of Microelectronics Peking University
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Zhang Xing
Institute Of Advanced Material Study Kyushu University
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Xing Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Gang Du
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yunxiang Yang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ganggang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yandong He
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Zhang Xing
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Hong Jie
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Zhang Ganggang
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
著作論文
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation