He Yandong | Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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概要
- He Yandongの詳細を見る
- 同名の論文著者
- Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. Chinaの論文著者
関連著者
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He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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He Yandong
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Zhang Ganggang
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Du Gang
Institute Of Microelectronics Peking University
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Zhang Xing
Institute Of Advanced Material Study Kyushu University
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Xing Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Gang Du
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yangyuan Wang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yang Yunxiang
Institute of Microelectronics, Peking University, Beijing 100871, China
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Yunxiang Yang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Ganggang Zhang
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Yandong He
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Zhang Xing
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
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Hong Jie
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
著作論文
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique (Special Issue : Solid State Devices and Mate
- A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation