Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique (Special Issue : Solid State Devices and Mate
スポンサーリンク
概要
著者
-
Zhang Ganggang
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
-
He Yandong
Institute of Microelectronics and Key Laboratory of Microelectronics Devices and Circuits, Peking University, Beijing 100871, P. R. China
関連論文
- Forward-Body-Bias-Enhanced Negative Bias Temperature Instability Recovery of p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors
- Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal-Oxide-Semiconductor Field-Effect Transistors by a Novel Direct Current Current-Voltage Technique (Special Issue : Solid State Devices and Mate
- A Simple Circuit to Investigate Threshold Voltage Variation and Its Application in Monitoring Negative Bias Temperature Instability Degradation