Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
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概要
- 論文の詳細を見る
We systematically investigated the effect of the thermal oxidation treatment on the performance of AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs with thermal oxidation treatment exhibit four orders of magnitude reduction in gate leakage current, 80% reduction of trap density, and more than two times improvement of off-state drain breakdown voltage, compared with those shown by HEMTs without thermal oxidation treatment. The simplicity in the thermal oxidation treatment process, coupled with the drastic improvement in device performance render the thermal oxidation treatment highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
- 2011-04-25
著者
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WEN C.
Institute for Technology Research and Innovation, Deakin University
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Yu Min
Institute Of Atomic Energy Academia Sinica
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Shen Bo
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
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Zeng Chunhong
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
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Xu Fujun
Institute of Microelectronics, Peking University, Beijing 100871, China
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Cai Yong
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
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Zhang Baoshun
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
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Zhang Jincheng
Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China
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Liu Shenghou
Institute of Microelectronics, Peking University, Beijing 100871, China
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Wang Jinyan
National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Peking University, Beijing 100871, China
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Gong Rumin
Institute of Microelectronics, Peking University, Beijing 100871, China
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Lin Shuxun
Institute of Microelectronics, Peking University, Beijing 100871, China
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Dong Zhihua
Institute of Microelectronics, Peking University, Beijing 100871, China
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