Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films
スポンサーリンク
概要
- 論文の詳細を見る
- 2013-02-25
著者
-
WANG Xinqiang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
TANG Ning
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
SHEN Bo
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
Tang Ning
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
Shen Bo
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
Xu Fujun
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
Wang Xinqiang
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
Chen Guang
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
GE Weikun
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
ZHANG Yuewei
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
ZHENG Xiantong
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
-
MA Dingyu
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University
関連論文
- Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- Indium Compositional Homogeneity in In_Al_N Epilayers Grown by Metal Organic Chemical Vapor Deposition
- High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures
- InN/GaN Superlattices: Band Structures and Their Pressure Dependence
- InN/GaN Superlattices: Band Structures and Their Pressure Dependence
- Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films