High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures
スポンサーリンク
概要
- 論文の詳細を見る
The high-temperature characteristics of strain in fully strained and partially strain-relaxed Al0.2Ga0.8N/GaN heterostructures were investigated at temperatures from room temperature to 800 K by means of the high-resolution X-ray diffraction technique. The results show that an obvious temperature-dependent strain relaxation occurs in both 50-nm- and 100-nm-thick AlGaN layers when the temperature exceeds 523 K. The degree of strain relaxation increases by about 12% and 15% in 50-nm- and 100-nm-thick AlGaN layers, respectively, over the whole temperature range in our measurements. The temperature-dependent strain relaxation results in a theoretical 2DEG reduction of about 5 and 6% for the fully strained and partially strain-relaxed Al0.22Ga0.78N/GaN heterostructures, respectively. When the temperature is under 523 K, the in-plane strain in the 50-nm-thick AlGaN layer is stabler than that in the 100-nm-thick AlGaN layer due to a lower density of dislocations in the 50-nm-thick AlGaN layer.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-01-15
著者
-
Zhang Rong
Key Lab of Brain Functional Genomics, MOE & STCSM, Shanghai Institute of Brain Functional Genomics,
-
Xu Jing
Key Laboratory Of Tropical Crop Biotechnology Ministry Of Agriculture Institute Of Tropical Bioscien
-
Shen Bo
State Key Laboratory Of Artificial Microstructure And Mesoscopic Physics School Of Physics Peking University
-
Shen Bo
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
-
Chen Dunjun
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Zhang Kaixiao
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Tao Yaqi
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Wu Xiaoshan
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Zheng Youdou
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Xu Jing
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
-
Zhang Rong
Key Laboratory of Photonic and Electronic Materials, Department of Physics, Nanjing University, Nanjing 210093, China
関連論文
- Generation and Characterization of Islet Cell Tumor in pTet-on/pTRE-SV40Tag Double-Transgenic Mice Model(GENETICS, MOLECULAR BIOLOGY, AND GENE ENGINEERING)
- Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
- Cloning and Molecular Characterization of HbCOI1 from Hevea brasiliensis
- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
- Indium Compositional Homogeneity in In_Al_N Epilayers Grown by Metal Organic Chemical Vapor Deposition
- High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures
- Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films