Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we report a single-chip large area (5\times 5 mm<sup>2</sup>) InGaN/GaN blue LED with the optical output power of 4.3 W. This device consists of 24-stages small LED-cells that are connected in series. Driven at 500 mA, the forward voltage is measured to be 87.2 V with a reverse current of 2.63\times 10^{-9} A at -120 V. The comparison of two different cooling schemes, i.e., with/without fan cooling, was made; the results suggest that the thermal convection between the heat sink and air is more critical. A simple white LED package was also tried by covering silicone gel mixed with yttrium aluminum garnet (YAG) phosphor. The luminous flux and the correlated color temperature (CCT) were measured to be 1090 lm and 5082 K, when the device was driven at 500 mA. This report also demonstrated the feasibility of the application for camera flash.
- 2013-08-25
著者
-
Cai Yong
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125, China
-
Zhang Bao-shun
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou, Jiangsu 215123, China
-
Huang Wei
WuXi Jingkai Technology Co., Ltd., Wuxi, Jiangsu 214061, China
-
Wang Wei
Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Science, Suzhou, Jiangsu 215123, China
-
Li Hai-ou
WuXi Jingkai Technology Co., Ltd., Wuxi, Jiangsu 214061, China
関連論文
- Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
- Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode
- Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode