Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on c-Plane Sapphire

スポンサーリンク

概要

• 論文の詳細を見る

• The authors report the effects of growth temperature on the structural and electrical properties of InAlN/GaN heterostructures, which were grown on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition (PMOCVD). High resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM) measurements indicate that the quality of InAlN barrier is strongly dependent on the growth temperature. It is observed that the indium composition and surface root-mean-square (rms) roughness value of InAlN barrier decrease with increasing the growth temperature, and a nearly lattice-matched InAlN/GaN heterostructure with a smooth surface is obtained at 710 °C. As a consequence, the variation of structural properties of InAlN barrier influences the electrical properties of InAlN/GaN heterostructures, and high electron mobility in excess of 1400 cm²V^-1s^-1is achieved at an optimized growth temperature window of InAlN barrier layer between 710 and 730 °C.

• 2013-08-25

著者

• Xue JunShuai

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

• Zhang JinCheng

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

• Zhang Jincheng

  Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

• Hao Yue

  Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, People's Republic of China

関連論文

• Enhanced Device Performance of AlGaN/GaN High Electron Mobility Transistors with Thermal Oxidation Treatment
• Effects of Growth Temperature on Structural and Electrical Properties of InAlN/GaN Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on c-Plane Sapphire

スポンサーリンク