Fully Transparent Al-Doped ZnO Thin-Film Transistors on Flexible Plastic Substrates

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概要

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• We have fabricated fully transparent Al-doped ZnO thin-film transistors (AZO TFTs) on a flexible plastic substrate at room temperature. A double-stacked channel structure composed of a high-density layer and a low-density layer is also investigated to improve the device performance. As-fabricated TFTs exhibit excellent electrical performance as well as optical performance, with a saturation mobility of 31.4 cm²V^-1s^-1, a drain current on/off ratio of about 10^{8}, a subthreshold swing of 330 mV/dec, and an average transmittance in the visible wavelength range of above 70%.

• 2013-04-25

著者

• Zhang Xing

  Institute Of Advanced Material Study Kyushu University

• Wang Yi

  Institute For Horticultural Plants China Agricultural University

• Wang Wei

  Institute Of Atmospheric Physics Chinese Academy Of Sciences

• Han Dedong

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Geng Youfeng

  Institute of Microelectronics, Peking University, Beijing 100871, People's Republic of China

• Tian Yu

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Cai Jian

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Wang Liangliang

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Zhang Shengdong

  Shenzhen Graduate School, Peking University, Shenzhen 518055, P. R. China

• Wang Longyan

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

• Geng Youfeng

  Institute of Microelectronics, Peking University, Beijing 100871, P. R. China

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