Gd Doping Improved Resistive Switching Characteristics of TiO2-Based Resistive Memory Devices
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概要
- 論文の詳細を見る
Binary metal-oxide-based resistive memory devices generally show broad dispersions of resistive switching parameters with continuous resistive switching, and this leads to severe readout and control hazards. In this paper, we report improvements of the resistive switching characteristics in TiO2-based resistive memory devices induced by the Gd doping of TiO2 films. The effect of Gd doping on the resistive switching of TiO2-based resistive memory devices is discussed.
- 2008-04-25
著者
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Kang Jin-feng
Institute Of Microelectronics Peking University
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Han Ru-qi
Institute Of Microelectronics Peking University
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Liu Li-feng
Institute Of Microelectronics Peking University
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Zhang Xing
Institute Of Advanced Material Study Kyushu University
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Wang Yi
Institute For Horticultural Plants China Agricultural University
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Zhang Xing
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Li-Feng
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiao-Yan
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Xu Nuo
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Sun Xiao
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Chen Chen
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Sun Bing
Institute of Microelectronics, Peking University, Beijing 100871, P. R. China
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Liu Xiao-Yan
Institute of Cardiovascular Research, Key Laboratory for Atherosclerology of Hunan Province, Life Science Research Center
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