Performance Investigation on p-Type Si-, Ge-, and Ge--Si Core--Shell Nanowire Schottky Barrier Transistors

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In this paper, we investigate the working mechanism of p-channel Schottky barrier Ge--Si core--shell nanowire transistors and then study the impact factors on the device performance of Schottky barrier transistors using Si-, Ge-, and Ge--Si core--shell nanowires as channels. For Ge--Si core--shell channel devices, most holes tunnel at the source near the heterojuction and transport in the Ge core region. Ge channel devices can provide the largest drive current and core--shell devices have the smallest sub-threshold slope among above three types of transistors. It is also found that core--shell device's conductive currents vary a little when fixing Ge core radius and changing Si shell thickness, and core--shell devices' normalized drain current can be greatly enhanced by reducing nanowires' radius or increasing core radius. Moreover, the drivability of core--shell devices is insensitive to both silicide/channel and germanide/channel barrier heights, which will further relax the requirement for contact materials.
2011-04-25