Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
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概要
- 論文の詳細を見る
A novel n-channel flash memory cell, which uses source induced band-to-band hot electron injection (SIBE) to perform programming, is proposed in this paper. With the proposed programming method, the drain voltage and the control gate voltage can be reduced to as low as $-3.6$ V and 10 V with the assistance of the source voltage, and the programming speed can increase up to 10 μs. Moreover, the programming current is reduced to approximately 3.0 μA, and a large read current of 64 μA is also realized. The simulation and the testing results show that the proposed flash cell features low programming voltage, low power, high programming efficiency, high read current, low bit-line leakage current, and good reliability.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Zhu Jun
Institute Of Forensic Science Ministry Of Public Security
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Wu Dong
Institute Of Microelectronics Tsinghua University
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Zeng Ying
Institute Of Microelectronics Tsinghua University
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Pan Liyang
Institute Of Microelectronics Tsinghua University
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FU Yuxia
Institute of Microelectronics, Tsinghua University
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DUAN Zhigang
Institute of Microelectronics, Tsinghua University
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LIU Jianzhao
Institute of Microelectronics, Tsinghua University
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Sun Lei
Institute Of Microelectronics Peking University
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Zeng Ying
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Liu Jianzhao
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Duan Zhigang
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Fu Yuxia
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Wu Dong
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Sun Lei
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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Zhu Jun
Institute of Microelectronics, Tsinghua University, Beijing 100084, China
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