Distribution and Impact of Local Trapped Charges in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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ZHU Jun
Institute of Forensic Science, Ministry of Public Security
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Zhu Jun
Institute Of Microelectronics Tsinghua University
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Zhu Jun
Institute Of Forensic Science Ministry Of Public Security
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Pang Huiqing
Institute Of Microelectronics Tsinghua University
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Sun Lei
Institute Of Microelectronics Tsinghua University
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PAN Liyang
Institute of Microelectronics, Tsinghua University
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ZENG Ying
Institute of Microelectronics, Tsinghua University
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ZHANG Zhaojian
Institute of Microelectronics, Tsinghua University
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WANG Jimin
Institute of Microelectronics, Tsinghua University
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LI Xiyou
Institute of Microelectronics, Tsinghua University
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Li Xiyou
Institute Of Microelectronics Tsinghua University
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Zeng Ying
Institute Of Microelectronics Tsinghua University
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Pan Liyang
Institute Of Microelectronics Tsinghua University
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Wang Jimin
Institute Of Microelectronics Tsinghua University
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Zhang Zhaojian
Institute Of Microelectronics Tsinghua University
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Sun Lei
Institute Of Microelectronics Peking University
関連論文
- Population genetic polymorphisms for 17 Y-chromosomal STRs haplotypes of Chinese Salar ethnic minority group
- Lateral Redistribution and Interactive Impacts of Localized Trapped Charges during Retention Baking in SONOS Memory
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- Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory
- Distribution and Impact of Local Trapped Charges in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory
- Distribution and Impact of Local Trapped Charges in SONOS Memory
- Hydrogenation Induced Room-Temperature Ferromagnetism in Co-doped ZnO Nanocrystals
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- Performance Investigation on p-Type Si-, Ge-, and Ge--Si Core--Shell Nanowire Schottky Barrier Transistors
- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
- Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory