Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory (Special Issue: Solid State Devices & Materials)

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Pang Huiqing

  Institute Of Microelectronics Tsinghua University

関連論文

• Lateral Redistribution and Interactive Impacts of Localized Trapped Charges during Retention Baking in SONOS Memory
• Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory (Special Issue: Solid State Devices & Materials)
• Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory
• Distribution and Impact of Local Trapped Charges in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory
• Distribution and Impact of Local Trapped Charges in SONOS Memory
• Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

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