Pang Huiqing | Institute Of Microelectronics Tsinghua University

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概要

• PANG Huiqingの詳細を見る
• 同名の論文著者
• Institute Of Microelectronics Tsinghua Universityの論文著者

関連著者

• Pang Huiqing

  Institute Of Microelectronics Tsinghua University

• Zhu Jun

  Institute Of Forensic Science Ministry Of Public Security

• Pan Liyang

  Institute Of Microelectronics Tsinghua University

• Sun Lei

  Institute Of Microelectronics Peking University

• ZHU Jun

  Institute of Forensic Science, Ministry of Public Security

• Zhu Jun

  Institute Of Microelectronics Tsinghua University

• Sun Lei

  Institute Of Microelectronics Tsinghua University

• PAN Liyang

  Institute of Microelectronics, Tsinghua University

• Zeng Ying

  Institute Of Microelectronics Tsinghua University

• Zhang Zhaojian

  Institute Of Microelectronics Tsinghua University

• ZENG Ying

  Institute of Microelectronics, Tsinghua University

• ZHANG Zhaojian

  Institute of Microelectronics, Tsinghua University

• CHEN John

  Semiconductor Manufacturing International Corporation

• WANG Jimin

  Institute of Microelectronics, Tsinghua University

• LI Xiyou

  Institute of Microelectronics, Tsinghua University

• Li Xiyou

  Institute Of Microelectronics Tsinghua University

• Wang Jimin

  Institute Of Microelectronics Tsinghua University

• Wu Dong

  Institute Of Microelectronics Tsinghua University

• Zhang Zhaojian

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Sun Lei

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Zhu Jun

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Chen John

  Semiconductor Manufacturing International Corporation, Shanghai 201203, P. R. China

• Pan Liyang

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

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著作論文

• Lateral Redistribution and Interactive Impacts of Localized Trapped Charges during Retention Baking in SONOS Memory
• Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory (Special Issue: Solid State Devices & Materials)
• Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory
• Distribution and Impact of Local Trapped Charges in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory
• Distribution and Impact of Local Trapped Charges in SONOS Memory
• Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

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