Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory

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概要

• 論文の詳細を見る

• In this paper, we present a combined charge-pumping measurement method for charge distribution profiling in charge-trapping memory. Electron and hole distributions after channel hot electron (CHE) or channel-initialed secondary electron (CHISEL) programming and band-to-band tunneling hot hole (BBHH) erasing are accurately determined. It is shown that BBHH-induced hot holes distribute in a narrow region near the drain junction, and cannot neutralize all the electrons particularly in CHISEL-programmed devices. The influence of the BBHH erasing condition on the width of hole distribution is demonstrated, and the effects on the characteristics of erasing speed and P/E cycling endurance are investigated and analyzed. It is shown that in the CHE-programmed devices, the erasing speed can be enhanced and endurance characteristics can be improved if a high drain voltage is used during erasing operation.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2006-04-30

著者

• Zhu Jun

  Institute Of Forensic Science Ministry Of Public Security

• Pang Huiqing

  Institute Of Microelectronics Tsinghua University

• CHEN John

  Semiconductor Manufacturing International Corporation

• Zeng Ying

  Institute Of Microelectronics Tsinghua University

• Pan Liyang

  Institute Of Microelectronics Tsinghua University

• Zhang Zhaojian

  Institute Of Microelectronics Tsinghua University

• Sun Lei

  Institute Of Microelectronics Peking University

• Zhang Zhaojian

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Sun Lei

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Zhu Jun

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

• Chen John

  Semiconductor Manufacturing International Corporation, Shanghai 201203, P. R. China

• Pan Liyang

  Institute of Microelectronics, Tsinghua University, Beijing 100084, P. R. China

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