Population genetic polymorphisms for 17 Y-chromosomal STRs haplotypes of Chinese Salar ethnic minority group
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概要
- 論文の詳細を見る
- 2007-07-01
著者
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YAN Jiangwei
Beijing Genomics Institute, Chinese Academy of Sciences
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Yan Jiangwei
Beijing Genomics Institute Chinese Academy Of Sciences
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ZHU Bofeng
Key Laboratory of Environment and Gene Related to Diseases (Xi'an Jiaotong University), Ministry of
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SHEN Chunmei
Key Laboratory of Environment and Gene Related to Diseases (Xi'an Jiaotong University), Ministry of
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XUN Xi
Key Laboratory of Environment and Gene Related to Diseases (Xi'an Jiaotong University), Ministry of
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DENG Yajun
Beijing Genomics Institute, Chinese Academy of Sciences
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ZHU Jun
Institute of Forensic Science, Ministry of Public Security
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LIU Yao
Key Laboratory of Environment and Gene Related to Diseases (Xi'an Jiaotong University), Ministry of
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Zhu Jun
Institute Of Forensic Science Ministry Of Public Security
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Liu Yao
Key Laboratory Of Environment And Gene Related To Diseases (xi'an Jiaotong University) Ministry
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Xun Xi
Key Laboratory Of Environment And Gene Related To Diseases (xi'an Jiaotong University) Ministry
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Zhu Bofeng
Key Laboratory Of Environment And Gene Related To Diseases (xi'an Jiaotong University) Ministry
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Deng Yajun
Beijing Genomics Institute Chinese Academy Of Sciences
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Shen Chunmei
Key Laboratory Of Environment And Gene Related To Diseases (xi'an Jiaotong University) Ministry
関連論文
- Allele frequencies of mitochondrial D-loop (CA)_n repeat polymorphism in six Chinese ethnic groups
- Population genetic polymorphisms for 17 Y-chromosomal STRs haplotypes of Chinese Salar ethnic minority group
- Lateral Redistribution and Interactive Impacts of Localized Trapped Charges during Retention Baking in SONOS Memory
- Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory
- Distribution and Impact of Local Trapped Charges in Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) Memory
- Distribution and Impact of Local Trapped Charges in SONOS Memory
- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
- Genetic polymorphisms of 15 STR loci of Chinese Dongxiang and Salar ethnic minority living in Qinghai Province of China
- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
- Characteristics of Band-to-Band Tunneling Hot Hole Injection for Erasing Operation in Charge-Trapping Memory