Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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ZHU Jun
Institute of Forensic Science, Ministry of Public Security
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Zhu Jun
Institute Of Microelectronics Tsinghua University
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Wu Dong
Institute Of Microelectronics Tsinghua University
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Sun Lei
Institute Of Microelectronics Tsinghua University
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PAN Liyang
Institute of Microelectronics, Tsinghua University
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ZENG Ying
Institute of Microelectronics, Tsinghua University
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FU Yuxia
Institute of Microelectronics, Tsinghua University
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DUAN Zhigang
Institute of Microelectronics, Tsinghua University
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LIU Jianzhao
Institute of Microelectronics, Tsinghua University
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- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming
- Low-Voltage and Low-Current Flash Memory Using Source Induced Band-to-Band Tunneling Hot Electron Injection to Perform Programming