Effect of O

概要

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High-performance aluminum-doped zinc oxide thin-film transistors (AZO TFTs) have been successfully fabricated on glass substrates. By controlling the oxygen flow ratio (OFR) during the deposition of an AZO active layer, we have demonstrated that the incorporation of oxygen in the deposition atmosphere plays an important role in improving the electronic performance of TFTs. For gate voltage V_{\text{G}} = -2 to 5 V, the TFTs with an AZO active layer sputter deposited in an atmosphere of Ar and O<inf>2</inf>mixture at room temperature (RT) as the channel layer exhibit much better properties than TFTs whose AZO layer was deposited in pure Ar atmosphere, such as a high saturation mobility (\mu_{\text{sat}}) of 113 cm2V-1s-1, a positive threshold voltage V_{\text{th}} of 1.5 V, an improved steep subthreshold swing from 400 to 125 mV/decade, a decreased off-state current (I_{\text{off}}) from 10^{-8} to 5\times 10^{-13} A, an increased on/off ratio from 10^{5} to 10^{9}, and a higher transmittance of 82.5%.
2013-04-25