Analysis of Recombination Process Resonantly Excited with Free Exciton Energy on CuInS_2 Using Photoacoustic Spectroscopy (Short Note)
スポンサーリンク
概要
- 論文の詳細を見る
Photoacoustic (PA) spectra have been investigated using a piezoelectric device and a tunable laser for CuInS_2 crystals grown by the traveling heater method. The PA spectrum at 9K shows two dips located at 1.536 and 1.556eV corresponding to "A" and "B" free excitons, respectively. The dips of the PA spectrum indicate an increase in the probability of radiative recombination for resonantly excited electron-hole pairs with free exciton energies. [DOI: 10.1143/JJAP.41.3356]
- 社団法人応用物理学会の論文
- 2002-05-30
著者
-
WAKITA Kazuki
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
Nakayama Noriaki
Fujitsu Laboratories Ltd.
-
Wakita Kazuki
Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University
-
Wakita Kazuki
Department Of Mathematical Science University Of Osaka Prefecture
-
Hu G
Fudan Univ. Shanghai Chn
-
HU Ge
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
NAKAYAMA Naoji
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
SHOJI Daisuke
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
-
Shoji Daisuke
Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University
-
Nakayama Naoji
Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University
-
Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
関連論文
- Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs
- Non-stoichiometry and Antiferromagnetic Phase Transition of NaCl-type CrN Thin Films Prepared by Reactive Sputtering
- 1D-TlInSe_2 : Band Structure, Dielectric Function and Nanorods
- Exchange Anisotropy of CrN_x/FeN_y/CrN_x Trilayer Thin Films Prepared by Reactive Sputtering
- Structural Properties of Amorphous Carbon Nitride Films Prepared by Reactive RF-Magnetron Sputtering
- Probability Distribution of Threshold Voltage Fluctuations in Metal-OXide-Semiconductor Field-Effect-Transistors : Semiconductors
- Low Temperature Synthesis of CdTe and Its Application to CdS/CdTe Solar Cell : III-1: II-VI COMPOUND SOLAR CELLS
- Screen -Printable Electrode Material for CdS and Its Application to Solar Cell : III-1: II-VI COMPOUND SOLAR CELLS
- Screen Printed Thin Film CdS/CdTe Solar Cell
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Quantum-Size Effect from Photoluminescence of Low-Temperature-Oxidized Porous Si
- Luminescence of Mixed-Mode Exciton-Polariton in CuGaS_2
- Resonant Raman Scattering and Its Correlation to Exciton Luminescence in AgGaS_2
- Full Optical Determination Method of {001} Lattice Plane of Uniaxial Birefringent Chalcopyrite Crystals
- Silicon-Monohydride Termination of Silicon-111 Surface Formed by Boiling Water
- High-Efficiency ZnCdSe/ZnSSe/ZnMgSSe Green Light-Emitting Diodes
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature : Beam Induced Physics and Chemistry
- Synchrotron-Radiation-Induced Modification of Silicon Dioxide Film at Room Temperature
- Synchrotron Radiation-Assisted Removal of Oxygen and Carbon Contaminants from a Silicon Surface
- Effects of Electron Irradiation on CuInS_2 Crystals
- Spectroscopic ellipsometry studies of CdS:O layers for solar cells (Special issue: Ternary and multinary compounds)
- Improvement of Stability in CdS-Cu_2S Ceramic Solar Cells
- CdS-CdTe Solar Cell Prepared by Vapor Phase Epitaxy
- Explicit Construction of Time-Energy Uncertainty Relationship in Quantum Mechanics
- Resonant Raman Effect on a CuGaSe_2 Crystal Grown by the Traveling Heater Method
- Structural Study of Amorphous SiN_x:H Films Produced by Plasma-Enhanced Chemical Vapor Deposition
- Analysis of Recombination Process Resonantly Excited with Free Exciton Energy on CuInS_2 Using Photoacoustic Spectroscopy (Short Note)
- Effect of Annealing on Photoluminescence Spectra and Film Structure in a-SiN_x:H
- Phonon Spectra of Chain TlSe and TlInSe2: Density Functional Theory Based Study
- Peculiar Linear Dispersive Bands Observed in Angle-Resolved Photoemission Spectra of Tl-Based Ternary Chalcogenide TlGaTe2
- 1D-TlInSe2: Band Structure, Dielectric Function and Nanorods
- Comparison of Optical Parameters of Ge--As(Sb)--Se(Te) Glassy Films
- Linearized Augmented Plane Wave Band Structure Calculations and Dielectric Function of Layered TlGaSe2
- Time-Resolved Emission of Excitons in CuInS2 Crystals
- Dispersion of Principal Refractive Indices of CaGa2S4
- Temperature-Dependent Angle-Resolved Photoemission Spectra of TlInSe2: Manifestations of Incommensurate and Commensurate Phases
- Defect States in CuInS2 Crystals Grown by Traveling Heater Method
- Effects of Electron Irradiation on CuInS2 Crystals
- Structural Study of Amorphous SiNx:H Films Produced by Plasma-Enhanced Chemical Vapor Deposition