Time-Resolved Emission of Excitons in CuInS2 Crystals
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概要
- 論文の詳細を見る
The time-resolved photoluminescence of free and bound excitons in bulk single crystal CuInS2 grown by the traveling heater method is examined. It is found that the radiative decay of the free exciton at 1.535 eV and the bound exciton at 1.530 eV is exponential with two characteristic decay times, while that of the bound excitons at 1.525 and 1.520 eV is well-represented by a single exponent at low temperatures. The radiative lifetime of the free exciton and those of the bound excitons at 1.530, 1.525, and 1.520 eV are obtained to be 320 ps, 500 ps, 2.1 ns, and 3.5 ns, respectively. The process of thermal release of the observed bound excitons is discussed in terms of the obtained activation energy. The capture center cross sections for the free exciton are also estimated. According to our estimates, a neutral charge is assigned to the defect centers associated with the observed bound excitons.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-10-25
著者
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Shim Yonggu
Department Of Physics And Electronics Osaka Prefecture University
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Onishi Takashi
Department Of Mechanical Engineering Kansai University
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Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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Nishi Kazuhito
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai 599-8531, Japan
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Ohta Yoshihiko
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai 599-8531, Japan
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Shim YongGu
Department of Physics and Electronics, Osaka Prefecture University, 1-1 Gakuencho, Naka-ku, Sakai 599-8531, Japan
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