Structural Study of Amorphous SiNx:H Films Produced by Plasma-Enhanced Chemical Vapor Deposition
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概要
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The structure of amorphous SiNx:H films prepared by glow discharge decomposition of SiH4 and NH3 has been investigated by measurements of X-ray diffraction intensity. The first peak in atomic density function obtained by analysis of diffraction intensity indicates a nearest-neighbor distance of 1.74 Å which corresponds to the Si–N bond length of 1.730–1.745 Å in β-Si3N4 crystal. We have also estimated the Si–N–Si–N bond configuration by comparing the corrected observed scattering intensity with the scattering intensity calculated using a simple bonding model. It has been shown that a Si atom bonded to a N atom with a coplanar bond has two tetrahedral bonds in the plane of the coplanar bonds.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-05-15
著者
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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Hayashi Hideki
Department Clinical Pharmacology & Genetics, School of Pharmaceutical Sciences, University of Shizuoka
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Wakita Kazuki
Department of Physics and Electronics, College of Engineering, Osaka Prefecture University,
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Hayashi Hideki
Department of Physics and Electronics, College of Engineering, Osaka Prefecture University,
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