1D-TlInSe2: Band Structure, Dielectric Function and Nanorods
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概要
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Linear combination of atomic orbitals (LCAO) analysis of the electronic band states has been completed for one-dimensional (1D) TlInSe2 having rod-like ground state shape of bulky crystal. The total scenario of the occurrence of the band states from the atomic states has been established. According to this scenario, in dipole approximation the optical transitions at band gap (point T of Brillouin zone) are either entirely forbidden or allowed for T2-T10 transitions in $\mathrm{e}\perp\mathrm{c}$ configuration provided that either initial or terminate state has T2 symmetry and both are Se-like. As a whole, the obtained results on the electronic spectrum, including dielectric function, are applicable to all obtained 1D-TlInSe2 nanorods which were as thin as 30–50 nm in cross-section, and apparently preserved tetragonal crystal structure of bulky material. The thermal instabilities developing already in bulky samples of 1D-TlInSe2 are considered to be an ultimate source of the nanoparticles emerging in plenty during nanorods preparation. The nanoplates of a chemically similar but 2D material, TlInS2, are demonstrated for comparison to show the absence of nanoparticles in that case. A possibility of nanoparticle preparation using laser excited coherent phonon trains in the nanorods of 1D-TlInSe2 is figured out.
- 2005-01-15
著者
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Mamedov Nazim
Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Akita Seiji
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Wakita Kazuki
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai, Osaka 599-8531, Japan
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Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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Mamedov Nazim
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai, Osaka 599-8531, Japan
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Nakayama Yoshikazu
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, Gakuen-cho 1-1, Sakai, Osaka 599-8531, Japan
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