Response of Carbon Nanotube Field Effect Transistors to Vibrating Gate Determined by Scanning Gate Microscopy
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概要
- 論文の詳細を見る
The response of a carbon nanotube field effect transistor (CNT-FET) to a vibrating gate has been investigated by scanning gate microscopy (SGM) with a frequency modulation (FM) mode in air at room temperature. Topography and current modulation images were obtained simultaneously. The CNT-FET successfully detected a cantilever vibration with an amplitude less than 50 nm and afrequency of 80 kHz.
- 2009-04-25
著者
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Akita Seiji
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Hata Kosuke
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
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Akita Seiji
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Naka-ku, Sakai 599-8531, Japan
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Nakayama Yoshikazu
Department of Mechanical Engineering, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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