Effect of Annealing on Photoluminescence Spectra and Film Structure in a-SiN_x:H
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概要
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The change of photolumiutescence (PL) spectra and structure in hydrogenated amorphous silicon-nitrogen alloy films deposited by glow-discharge decomposition of SiH_4 and NH_3 with various mixture ratios has been investigated as a function of annealing temperature. The PL spectra have a single broad band in the visible range and its peak energy shifts toward lower energy for NH_3/SiH_4≤6.0 and higher energy for NH_3/SiH_4≥6.8 by annealing at 600℃. The PL-peak energy varies linearly with optical band gap. Annealing at temperatures higher than 400℃ breaks Si-H and N-H bonds to form Si-N bonds for all samples. The Si-Si bond concentration decreases with annealing for NH_3/SiH_4≥7.5, while it is considered to increase for NH_3/SiH_4=5. The change observed in the PL-peak energy and the optical band gap with annealing is associated with the variation iua the concentration not only of Si-N but also of Si-Si bonds.
- 社団法人応用物理学会の論文
- 1995-03-15
著者
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Wakita Kazuki
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Wakita Kazuki
Department Of Mathematical Science University Of Osaka Prefecture
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Nakayama Yoshikazu
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Makimura Shinji
Department of Physics and Electronics, College of Engineering, University of Osaka Prefecture
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Makimura Shinji
Department Of Physics And Electronics College Of Engineering University Of Osaka Prefecture
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Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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