High-Rate Deposition of a-Si: H Film Using the Decomposition of Mono-Silane
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概要
- 論文の詳細を見る
High-rate deposition technique of a-Si: H films for an electrophotographic photoreceptor using a glow discharge decomposition of SiH_4 is described. The deposition parameters are optimized on the basis of results that the emission intensity ratio of the species H to SiH in the plasma is a function of the rf power and flow rate of SiH_4 by which a hydrogen bonding state in the resultant film is controlled. An a-Si: H film with a suitable hydrogen bonding state for excellent electrophotographic properties is prepared at the high deposition rate of 5 μm/h. It is also found that the deposition rate is proportional to the emission intensity of SiH.
- 社団法人応用物理学会の論文
- 1982-10-20
著者
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Nakayama Yoshikazu
College Of Engineering University Of Osaka Prefecture
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Nakayama Yoshikazu
College Of Engineering Graduate School Of Osaka Prefecture University
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Nakayama Yoshikazu
Department Of Electrical Engineering College Of Engineering University Of Osaka
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KAWAMURA Takao
Colleage of Engineering, University of Osaka Prefecture
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Kawamura Takao
Department Of Electrical Engineering College Of Engineering University Of Osaka
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NATSUHARA Toshiya
College of Engineering, University of Osaka Prefecture
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NAGASAWA Nobuo
College of Engineering, University of Osaka Prefecture
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Nagasawa Nobuo
College Of Engineering University Of Osaka Prefecture
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Natsuhara Toshiya
Department Of Electrical Engineering College Of Engineering University Of Osaka
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Kawamura Takao
Colleage Of Engineering University Of Osaka Prefecture
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Nakayama Yoshikazu
Colleage Of Engineering University Of Osaka Prefecture
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