Defect States in CuInS2 Crystals Grown by Traveling Heater Method
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概要
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The defect-related donor-acceptor pair emissions in photoluminescence spectra of CuInS2 crystals grown by the traveling heater method have been investigated to characterize the defects in the crystals. The energy levels of donors have been deduced to be 36 and 63–69 meV. Acceptors have been estimated to lie much deeper with energy levels at 113, 150, 180 and 220 meV. The origin of the donor and acceptor levels is discussed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-01-15
著者
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MIYOSHI Yoshihiro
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University
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Abe Kenichiro
Department Of Physics And Electronics Graduate School Of Engineering Osaka Prefecture University
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Onishi Takashi
Department Of Mechanical Engineering Kansai University
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Wakita Kazuki
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Wakita Kazuki
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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Abe Kenichiro
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Iwai Masaya
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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Miyoshi Yoshihiro
Department of Physics and Electronics, Graduate School of Engineering, Osaka Prefecture University, 1-1 Gakuen-cho, Sakai, Osaka 599-8531, Japan
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