Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)

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概要

• 論文の詳細を見る

• A Schottky contact model was implemented as a boundary condition for Monte Carlo device simulations. Unlike the ideal ohmic contact, the thermal equilibrium is unnecessary around the Schottky contact. Therefore, the wide region with high impurity concentration around the contact is not required to maintain the thermal equilibrium, which means that it is possible to avoid assigning a lot of particles to the low-field region. The validity of the present boundary condition for contacts was verified by simulating a rectifying characteristic of a Schottky barrier diode. As an application example using the present contact model, we simulated transport in n^+ nn^+ structures with sub-0.1μm channel lengths. We observed direction dependence of the electron velocity dispersion, which indicates that the direction dependence of the diffusion constant or the carrier temperature should be taken into account in the hydrodynamic simulation for sub-0.1μm devices.

• 社団法人電子情報通信学会の論文
• 2000-08-25

著者

• UCHIDA Ken

  Advanced LSI Technology Laboratory, Research & Development Center, Toshiba Corporation

• Matsuzawa Kazuya

  Semiconductor Technology Academic Research Center (starc)

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Research & Development Center Toshiba Corporation

• Matsuzawa Kazuya

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Matsuzawa K

  Toshiba Corp. Yokohama‐shi Jpn

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida Ken

  Advanced Lsi Technology Laboratory Toshiba Corporation

• Uchida Ken

  Advanced LSI laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan

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