Impact of Electron Heat Conductivity on Electron Energy Flux(<Special Issue>the IEEE International Conference on SISPAD '02)
スポンサーリンク
概要
- 論文の詳細を見る
The validity of the expression for the electron energy flux is evaluated by using the Monte Carlo simulation. The drift, divergence, and scattering terms are directly calculated from changes in the physical values of particles. Each term composing the momentum and energy conservation equations can be reproduced by indirect calculation of the expression for the term that is a function of other physical values. However, it is found that a parameter in electron heat conductivity has to be adjusted to reproduce the direct calculation of the energy flux. Namely, the parameter of the Wiedemann-Franz law for heat conductivity should be chosen so that the underestimations of the drift and diffusion terms in the energy flux equation cancel each other. It is shown that the parameter influences the electron temperature in a 50-nm gate nMOSFET.
- 社団法人電子情報通信学会の論文
- 2003-03-01
著者
-
Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
関連論文
- Analytical Single-Electron Transistor(SET)Model for Design and Analysis of Realistic SET Circuits
- Analysis of Si-Ge Source Structure in 0.15 μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Analysis of Si-Ge Source Structure in 0.15μm SOI MOSFETs Using Two-Dimensional Device Simulation
- Impact of Strained-Si Channel on Complementary Metal Oxide Semiconductor Circuit Performance under the Sub-100 nm Regime
- Impact of Strained-Si Channel on CMOS Circuit Performance under the Sub-100nm Regime
- A New Design Scheme for Logic Circuits with Single Electron Transistors
- Impact of Two-Dimensional Structure of nMOSFETs on Direct Tunnel Gate Current
- Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness
- Impact of Electron Heat Conductivity on Electron Energy Flux(the IEEE International Conference on SISPAD '02)
- Simulation Technique of Heating by Contact Resistance for ESD Protection Device(the IEEE International Coference on SISPAD '02)
- Impact of Random Dopant Fluctuation on Size-Dependence of Contact Resistance