Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
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概要
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We propose work function modulation by the segregation of indium through a W gate electrode. We studied the electrical properties of a metal oxide semiconductor (MOS) capacitor using a W/In/W stacked gate. By thermal annealing at 600 °C in N2 ambient, the flatband voltage ($V_{\text{fb}}$) of W/In/W stacked gate shifts toward a negative gate bias of ${\sim}550$ mV, compared with the W gate. The change in the work function in the W/In/W stacked gate structure is found to be due to indium segregation to the interface between the W gate electrode and the gate insulator through the W grain boundary. We successfully demonstrate work function modulation of the W gate electrode from 4.8 to 4.1 eV by the indium segregation technique.
- 2007-04-30
著者
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Nakajima Kazuaki
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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