Simulation Technique of Heating by Contact Resistance for ESD Protection Device(<Special Issue>the IEEE International Coference on SISPAD '02)
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概要
- 論文の詳細を見る
The potential drop and the self-healing due to the contact resistance at the interface between silicide and silicon are incorporated in the device simulation for ESD protection devices. A transition region is provided at the interface and the resistivity is calculated by scaling the contact resistance by the length of the region. The power density used in the heat conductive equation is calculated by using the potential drop and the contact resistance in the transition region. The validity of the present approach is checked by the Monte Carlo simulations. Using the technique, inflaence of the contact resistance on self-heating in an ESD protection device with the grounded gate MOSFET structure is simulated.
- 一般社団法人電子情報通信学会の論文
- 2003-03-01
著者
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Matsuzawa Kazuya
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Shigyo N
Semiconductor Company Toshiba Corporation
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KAWASHIMA Hirobumi
Semiconductor Company,Toshiba Corporation
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MATSUHASHI Toyoaki
Semiconductor Company,Toshiba Corporation
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SHIGYO Naoyuki
Semiconductor Company,Toshiba Corporation
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Matsuhashi Toyoaki
Semiconductor Company Toshiba Corporation
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Kawashima Hirobumi
Semiconductor Company Toshiba Corporation
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