Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-04-30

著者

• Koike Mitsuo

  Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation

• Nishiyama Akira

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• KAMIMUTA Yuuichi

  Advanced LSI Technology Laboratory, Toshiba Corp.

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• SUZUKI Masamichi

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

関連論文

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• Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
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• Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
• Improvement of Memory Characteristics of Metal-Ferroelectrics/Insulating Buffer Layer/Semiconductor Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Improvement of Memory Characteristics of MFIS Structures by Combination of Pulsed Laser Deposited SrBi_2Ta_2O_9 Films and Ultra-Thin SiN Buffer Layers
• Elevated Extension Structure for 35nm MOSFETs
• Elevated Extension Structure for 35nm MOSFETs
• High quality La aluminates/Si (100) interface realized by passivation of Si dangling bonds with one monolayer epitaxial SrSi_2
• Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
• Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
• The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
• Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
• Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
• Dielectric Constant Behavior of Hf-O-N System
• Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
• Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
• Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
• Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
• Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
• Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
• Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
• Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
• Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
• Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
• Physical Understanding of Determinant Factors for φeff on La-based High-k
• Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics
• Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
• Dielectric Constant Behavior of Hf–O–N System
• Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
• Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
• Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
• Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing
• Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks
• Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process

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