Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
スポンサーリンク
概要
- 論文の詳細を見る
- 2005-09-13
著者
-
Koike Mitsuo
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
-
Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
-
KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
-
Mitani Yuichiro
Advanced Lsi Technology Laboratory Toshiba Corporation
-
Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
-
Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
-
Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
-
Koike Masahiro
Advanced Lsi Technology Laboratory Corporate Research&development Center Toshiba Corporation
-
Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
INO Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
-
Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
-
Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
-
Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
関連論文
- Olmesartan Improves Endothelin-Induced Hypertension and Oxidative Stress in Rats
- Effects of Angiotensin II on the Renal Interstitial Concentrations of NO_2/NO_3 and Cyclic GMP in Anesthetized Rats
- Contribution of Chymase-Dependent Angiotensin II Formation to the Progression of Tubulointerstitial Fibrosis in Obstructed Kidneys in Hamsters
- Effects of AT1 Receptor Blockade on Oxidative Stress in Dahl Rat Hypertensive Heart Failure (Heart Failure, Basic 7 (M), The 69th Annual Scientific Meeting of the Japanese Circulation Society)
- Systemic candesartan reduces brain angiotensin II via downregulation of brain renin-angiotensin system
- Comparison of central blood pressure and cardio-ankle vascular index for association with cardiac function in treated hypertensive patients
- The opposite roles of nNOS in cardiac ischemia-reperfusion-induced injury and in ischemia preconditioning-induced cardioprotection in mice
- Possible Involvement of Rho-Kinase in Aldosterone-Induced Vascular Smooth Muscle Cell Remodeling
- Augmentation of Intrarenal Angiotensin II Levels in Uninephrectomized Aldosterone/Salt-Treated Hypertensive Rats ; Renoprotective Effects of an Ultrahigh Dose of Olmesartan
- Effects of a New Calcium Channel Blocker, Azelnidipine, on Systemic Hemodynamics and Renal Sympathetic Nerve Activity in Spontaneously Hypertensive Rats
- Tissue Doppler Echocardiography for Predicting Arterial Stiffness Assessed by Cardio-Ankle Vascular Index
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Guidelines for the threshold voltage control of metal/HfSiON system(Session2: Silicon Devices I)
- Ta-based metal gates (Ta, TaB_x, TaN_x and TaC_x) : Modulated Work Function and Improved Thermal Stability
- Material Characterization of Metal-germanide Gate Electrodes Formed by FUGE (Fully Germanided) Process
- Precipitation of Boron in Highly Boron-Doped Silicon
- Analysis of the Relationship between the Incisal Overjet in a Maxillary Denture and Phonetic Function Using a Speech Recognition System
- Influence of Loading Positions of Mandibular Unilateral Distal Extension Removable Partial Dentures on Movements of Abutment Tooth and Denture Base
- The effects of loading locations and direct retainers on the movements of the abutment tooth and denture base of removable partial dentures
- Elevated Extension Structure for 35nm MOSFETs
- Elevated Extension Structure for 35nm MOSFETs
- Oxide-Mediated Solid Phase Epitaxy(OMSPE)of Silicon : A New Low-Temperature Epitaxy Technique Using Intentionally Grown Native Oxide
- Impact of Captured-Carrier Distribution on Recovery Characteristics of Positive- and Negative-Bias Temperature Instability in HfSiON/SiO_2 Gate Stack
- Influences of initial bulk traps on Negative Bias Temperature Instability of HfSiON
- Improved Performance of Schottky Barrier Source/Drain Transistors with High-K Gate Dielectrics by Adopting Recessed Channel and/or Buried Source/Drain Structures
- Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon
- Drug Discovery for Overcoming Chronic Kidney Disease (CKD) : Pharmacological Effects of Mineralocorticoid-Receptor Blockers
- The Highly Reliable Evaluation of Mobility in an Ultra Thin High-k Gate Stack with an Advanced Pulse Measurement Method
- Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO_2 Gate Dielectrics
- Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
- Dielectric Constant Behavior of Hf-O-N System
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
- Influence of pre-existing electron traps on drive current in MISFETs with HfSiON gate dielectrics
- Direct Comparison of ZrO_2 and HfO_2 on Ge Substrate in Terms of the Realization of Ultrathin High-κ Gate Stacks
- Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
- Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
- Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
- P7-19 Effect of superoxide dismutase inhibitor Diethyldithio-carbamic acid on renal sympathetic nerve activity in anesthetized rats(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATI
- P7-17 Temporary angiotensin blockade at a prediabetic stage attenuates the development of renal injury in type II diabetic rats(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATION)(
- P7-13 Contribution of aldosterone to the activation of mitogen-activated protein kinases and the progression of glomerular injury(IMMUNE AND ALLERGIC SYSTEM/KIDNEYS AND URINARY EXCRETION SYSTEM/CYTOTOXICITY/OTHERS-1)(GENERAL SESSION BY POSTER PRESENTATION
- O-24 Independent regulation of intrarenal angiotensin receptors expression during the development of cyclosporine A-induced hypertension(KIDNEYS AND URINARY EXCRETION SYSTEM)(GENERAL SESSION BY ORAL PRESENTATION)(Proceedings of the 31st Annual Meeting)
- High-Resolution Measurement of Ultra-Shallow Structures by Scanning Spreading Resistance Microscopy
- Work Function Modulation by Segregation of Indium through Tungsten Gate For Dual-Metal Gate CMOS Applications
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO_2 by SiD_4 Poly-Si Gate Electrode
- Double Junction Tunnel using Si Nanocrystalline Layer for Nonvolatile Memory Devices
- Deuterium Effect on Both Interface-State Generation and Stress-Induced-Leakage-Current under Fowler-Nordheim Electron Injection
- A Study of the Effect of Deuterium on Stress-Induced Leakage Current
- Time Evolution of Mean and Dispersion in Si/SiO_2 Interface States Generation Statistics
- Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
- Dependence of Effective Work Function Modulation with Phosphorous Segregation on Ni to Si Ratio in Ni Silicide/SiO2 Systems
- Method of Decoupling the Bias Temperature Instability Component from Hot Carrier Degradation in Ultrathin High-$k$ Metal–Oxide–Semiconductor Field-Effect Transistors
- Electron Mobility Degradation Mechanisms in HfSiON MISFETs under the Real Operating Condition
- Dependences of Device Performances on Interfacial Layer Materials of High-k MISFETs due to Wave Function Penetration into Gate Dielectrics
- Experimental Clarification of Hydrogen-related Mechanism in NBT Degradation
- The Relation between Dielectric Constant and Film Composition of Ultra-Thin Silicon Oxynitride Films : Experimental Evaluation and Analysis of Nonlinearity
- Monte Carlo Simulation of Sub-0.1μm Devices with Schottky Contact Model (Special lssue on SISPAD'99)
- Evidence of Electrical and Structural Evolution of Gate Dielectric Breakdown Observed by Conductive Atomic Force Microscopy
- Dielectric Constant Behavior of Hf–O–N System
- Work Function Modulation by Segregation of Indium through Tungsten Gate for Dual-Metal-Gate Complementary Metal Oxide Semiconductor Applications
- Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
- Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
- Reconsideration of Hydrogen Release at Ultra Thin Gate Oxide Interface
- Effect of Film Composition of Nitrogen Incorporated Hafnium Aluminate (HfAlON) Gate Dielectric on Structural Transformation and Electrical Properties through High-Temperature Annealing
- Ultralow Contact Resistivity for a Metal/p-Type Silicon Interface by High-Concentration Germanium and Boron Doping Combined with Low-Temperature Annealing
- Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks
- Material Characterization of Metal Germanide Gate Electrodes Formed by Fully Germanided Gate Process