Suppression of Stress-Induced Leakage Current of Wet and Dry SiO2 by SiD4 Poly-Si Gate Electrode
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概要
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In this paper, we report on the effect of deuterated poly-Si deposition on stress-induced leakage current (SILC) under Fowler–Nordheim (F–N) electron injection. A deuterated poly-Si gate electrode was deposited on wet and dry thin gate oxide films by utilizing deuterated monosilane (SiD4) gas, as a substitute for hydrogenated monosilane (SiH4) gas. As a result, it was found that SILC values of both wet and dry oxides were clearly suppressed by the deuterated poly-Si gate electrode. Experimental results for the depth profiles of the introduced-deuterium atoms indicated that a large amount of deuterium is introduced into the gate oxide films after the deuterated poly-Si deposition. Furthermore, it was found that hydrogen concentration in a wet oxide film decreases by high-temperature deuterium annealing, while deuterium concentration increases. It is inferred that both high concentration of deuterium and high-temperature annealing for gate doping after poly-Si deposition bring about the suppression of SILC due to the efficient replacement of hydrogen with deuterium in gate oxide films.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Mitani Yuichiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Satake Hideki
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Mitani Yuichiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 8, Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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