Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric

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概要

• 論文の詳細を見る
• 2005-09-13

著者

• Nishiyama Akira

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• Koyama Masato

  Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation

• KAMIMUTA Yuuichi

  Advanced LSI Technology Laboratory, Toshiba Corp.

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• Nishiyama Akira

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• Koyama Masato

  Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation

• KAMATA Yoshiki

  Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation

• Kamimuta Yuuichi

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Kamata Yoshiki

  Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation

• IIJIMA Ryosuke

  Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation

• Iijima Ryosuke

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• INO Tsunehiro

  Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation

• Ino Tsunehiro

  Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

• Iijima Ryosuke

  Advanced Lsi Technology Laboratory Corporate Research & Development Center

• Kamimuta Yuuichi

  Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation

• Ino Tsunehiro

  Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation

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