Ino Tsunehiro | Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation

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著作論文

Dielectric Constant Behavior of Oriented Tetragonal Zr-Si-O System
Influences of Activation Annealing on Characteristics of Ge p-MOSFET with ZrO_2 Gate Dielectric
Dielectric Constant Behavior of Hf-O-N System
Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
Exact Trap Level Estimation of HfSiON Films with Various Atomic Compositions
Cubic-HfN Formation in Hf-Based High-k Gate Dielectrics with N Incorporation and Its Impact on Electrical Properties of Films
Cubic-HfN Formation in Hf-based High-k Gate Dielectrics with N-Incorporation and Its Impact on Electrical Properties of Films
Direct comparison of ZrO_2 and HfO_2 on Ge substrate in terms of the realization of ultra-thin high-k gate stacks
Determination of Band Alignment of Hafnium Silicon Oxynitride/Silicon (HfSiON/Si) Structures using Electron Spectroscopy
Dielectric Constant Behavior of Hf–O–N System
Influences of Annealing Temperature on Characteristics of Ge p-Channel Metal Oxide Semiconductor Field Effect Transistors with ZrO2 Gate Dielectrics
Direct Comparison of ZrO2 and HfO2 on Ge Substrate in Terms of the Realization of Ultrathin High-$\kappa$ Gate Stacks

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