SEKINE Katsuyuki | Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
スポンサーリンク
概要
関連著者
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Tsunashima Yoshitaka
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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TSUNASHIMA Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Semiconductor Company, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Saito Tomohiro
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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Matsuo Kouji
Process And Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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SUGURO Kyoichi
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corp.
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Nishiyama Akira
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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Koyama Masato
Advanced LSI Technology Laboratory, Corporate R & D Center, Toshiba Corporation
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KAMIMUTA Yuuichi
Advanced LSI Technology Laboratory, Toshiba Corp.
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Nishiyama Akira
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Tsunashima Yoshitaka
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Koyama Masato
Advanced Lsi Technology Laboratory Corporate R & D Center Toshiba Corporation
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Suguro Kyoichi
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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YAMAGUCHI Takeshi
Research & Development Center, Toshiba Corporation
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HIRANO Izumi
Research & Development Center, Toshiba Corporation
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SUGURO Tomohiro
process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation
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Hirano Izumi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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TAKAYANAGI Mariko
Center for Semiconductor Research & Development, Toshiba Corporation Semiconductor Company
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INO Tsunehiro
Advanced LSI Technology Laboratory, Corporate Research and Development Center, TOSHIBA Corporation
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TAKAYANAGI Mariko
SoC Research & Development Center, Toshiba Corporation Semiconductor Company
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TOMITA Mitsuhiro
Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Tomita Mitsuhiro
Advanced Lsi Technology Laboratory Corporate Research & Development Center Toshiba Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Yamaguchi Takeshi
Advanced Lsi Technology Laboratory Corporate R&d Center Toshiba Corporation
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Nakajima Kazuaki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.
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SAITO Masaki
SONY Co.
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Kamimuta Yuuichi
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Kawanaka Shigeru
Center For Semiconductor Research & Development, Semiconductor Company, Toshiba Corporation
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Ino Tsunehiro
Advanced Lsi Technology Laboratory Corporate Research And Development Center Toshiba Corporation
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Aoyama Tomonori
Process & Manufacturing Center Semiconductor Company Toshiba Corporation
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Sekine Katsuyuki
Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Takayanagi Mariko
Advanced Cmos Technology Dept. Center For Semiconductor Research & Development Semiconductor Com
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Takayanagi Mariko
Center For Semiconductor Research & Development Toshiba Corporation Semiconductor Company
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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Azuma Atsushi
Center for Semiconductor Research and Development, Toshiba Corp., Semiconductor Co., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toyoshima Yoshiaki
Center for Semiconductor Research and Development, Toshiba Corp., Semiconductor Co., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Azuma Atsushi
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nakasaki Yasushi
Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nakasaki Yasushi
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Toyoshima Yoshiaki
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Nagatomo Koji
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Watanabe Takeshi
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kojima Kenji
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamaguchi Takeshi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Tsunashima Yoshitaka
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Watanabe Koji
NEC Electronics Corporation, 1120 Shimokuzawa, Sagaminara, Kanagawa 229-1198, Japan
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Hasegawa Eiji
NEC Electronics Corporation, 1120 Shimokuzawa, Sagaminara, Kanagawa 229-1198, Japan
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Koyama Masato
Corporate Research and Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Hirano Izumi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Aoyama Tomonori
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Aoyama Tomonori
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Kawanaka Shigeru
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Saito Masaki
Sony Corporation, 4-14-1 Asahi-cho, Atsugi, Kanagawa 243-0014, Japan
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Eguchi Kazuhiro
Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Eguchi Kazuhiro
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sekine Katsuyuki
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sekine Katsuyuki
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Takayanagi Mariko
Center for Semiconductor Research and Development, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Koyama Masato
Corporate Research & Development Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Sato Motoyuki
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sato Motoyuki
Process and Manufacturing Engineering Center, Toshiba Corporation Semiconductor Company, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
著作論文
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States
- Low-Standby-Power Complementary Metal-Oxide-Semiconductor Transistors with TiN Single Gate on 1.8 nm Gate Oxide
- Improvement in the asymmetric Vfb shift of poly-Si/HfSiON/Si by inserting oxygen diffusion barrier layers into the interfaces
- Performance and Reliability Improvement of HfSiON Field-Effect Transistor with Low Hafnium Concentration Cap Layer Formed by Metal Organic Chemical Vapor Deposition with Diethylsilane
- Threshold Voltage Control of Hf-based High-$\kappa$ Gate Stack System by Fluorine Incorporation into Channel and Its Impact on Short-Channel Characteristics
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States