Hirano Izumi | Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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概要
- Hirano Izumiの詳細を見る
- 同名の論文著者
- Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japanの論文著者
関連著者
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Hirano Izumi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Mitani Yuichiro
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Sato Motoyuki
Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
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AOYAMA Tomonori
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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SEKINE Katsuyuki
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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EGUCHI Kazuhiro
Process & Manufacturing Center, Semiconductor Company, Toshiba Corporation
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Eguchi Kazuhiro
Semiconductor Company Toshiba Corporation
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Sekine Katsuyuki
Semiconductor Company Toshiba Corporation
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Takayanagi Mariko
Semiconductor Company Toshiba Corporation
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Nakasaki Yasushi
Corporate R&D Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamaguchi Takeshi
Corporate Research & Development Center, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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TSUNASHIMA Yoshitaka
Process & Manufactruing Engineering Center, Semiconductor Company, Toshiba Corporation
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Hirano Izumi
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Saitoh Masumi
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Numata Toshinori
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
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Aoyama Tomonori
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Eguchi Kazuhiro
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sekine Katsuyuki
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Sato Motoyuki
Process and Manufacturing Center, Semiconductor Company, Toshiba Corporation, 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, Japan
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Yamaguchi Takeshi
Semiconductor Technology Academic Research Center, Yokohama 222-0033, Japan
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Iijima Ryosuke
Corporate Research and Development Center, Toshiba Corporation, Yokohama 235-8522, Japan
著作論文
- Effects of Electron Current and Hole Current on Dielectric Breakdown in HfSiON Gate Stacks
- Characteristics of Defect Generation and Breakdown in SiO2 for Polycrystalline Silicon Channel Field-Effect Transistor
- Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States